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  1. product pro?le 1.1 general description planar pin diode in a sod882t leadless ultra small plastic smd package. 1.2 features n high speed switching for rf signals n low diode capacitance n low forward resistance n very low series inductance n for applications up to 3 ghz 1.3 applications n rf attenuators and switches 2. pinning information [1] the marking bar indicates the cathode. 3. ordering information BAP51LX silicon pin diode rev. 01 26 june 2007 product data sheet table 1. discrete pinning pin description simpli?ed outline symbol 1 cathode [1] 2 anode transparent top view 2 1 sym006 table 2. ordering information type number package name description version BAP51LX - leadless ultra small plastic package; 2 terminals; body 1.0 0.6 0.4 mm sod882t
BAP51LX_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 26 june 2007 2 of 8 nxp semiconductors BAP51LX silicon pin diode 4. marking 5. limiting values 6. thermal characteristics 7. characteristics table 3. marking type number marking code BAP51LX l2 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v r reverse voltage - 60 v i f forward current - 100 ma p tot total power dissipation t sp = 90 c - 140 mw t stg storage temperature - 65 +150 c t j junction temperature - 65 +150 c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 66 k/w table 6. characteristics t amb = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v f forward voltage i f = 50 ma - 0.95 1.1 v i r reverse current v r = 50 v - - 100 na c d diode capacitance see figure 1 ; f = 1 mhz; v r = 0 v - 0.30 - pf v r = 1 v - 0.22 0.40 pf v r = 5 v - 0.17 0.30 pf r d diode forward resistance see figure 2 ; f = 100 mhz; i f = 0.5 ma - 4.9 9 w i f = 1 ma - 3.2 6.5 w i f = 10 ma - 1.4 2.5 w i f = 100 ma - 0.9 1.5 w isl isolation see figure 3 ;v r =0v; f = 900 mhz - 19 - db f = 1800 mhz - 15 - db f = 2450 mhz - 13 - db
BAP51LX_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 26 june 2007 3 of 8 nxp semiconductors BAP51LX silicon pin diode l ins insertion loss see figure 4 ;i f = 0.5 ma; f = 900 mhz - 0.36 - db f = 1800 mhz - 0.36 - db f = 2450 mhz - 0.38 - db l ins insertion loss see figure 4 ;i f = 1 ma; f = 900 mhz - 0.25 - db f = 1800 mhz - 0.26 - db f = 2450 mhz - 0.27 - db l ins insertion loss see figure 4 ;i f =10ma; f = 900 mhz - 0.12 - db f = 1800 mhz - 0.14 - db f = 2450 mhz - 0.15 - db l ins insertion loss see figure 4 ;i f = 100 ma; f = 900 mhz - 0.09 - db f = 1800 mhz - 0.10 - db f = 2450 mhz - 0.12 - db t l charge carrier life time when switched from i f = 10 ma to i r = 6 ma; r l = 100 w ; measured at i r =3ma - 0.55 - m s l s series inductance i f = 100 ma; f = 100 mhz - 0.4 - nh table 6. characteristics continued t amb = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit f = 1 mhz; t j =25 c. f = 100 mhz; t j =25 c. fig 1. diode capacitance as a function of reverse voltage; typical values fig 2. forward resistance as a function of forward current; typical values 001aag633 v r (v) 020 16 812 4 200 100 300 400 c d (ff) 0 001aag634 i f (ma) 10 - 1 10 2 10 1 10 1 10 2 r d ( w ) 10 - 1
BAP51LX_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 26 june 2007 4 of 8 nxp semiconductors BAP51LX silicon pin diode t amb =25 c diode zero biased and inserted in series with a 50 w stripline circuit t amb =25 c (1) i f = 100 ma (2) i f =10ma (3) i f =1ma (4) i f = 0.5 ma diode inserted in series with a 50 w stripline circuit and biased via the analyzer tee network fig 3. isolation of the diode as a function of frequency; typical values fig 4. insertion loss of the diode as a function of frequency; typical values 001aag635 f (mhz) 0 3000 2000 1000 - 20 - 30 - 10 0 isl (db) - 40 001aag636 f (mhz) 0 3000 2000 1000 - 0.6 - 0.4 - 0.8 - 0.2 0 l ins (db) - 1.0 (1) (2) (3) (4)
BAP51LX_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 26 june 2007 5 of 8 nxp semiconductors BAP51LX silicon pin diode 8. package outline fig 5. package outline sod882t references outline version european projection issue date iec jedec jeita sod882t sod882t 04-12-14 06-04-12 note 1. the marking bar indicates the cathode unit a mm 0.40 0.36 0.55 0.45 0.65 0.55 1.05 0.95 0.30 0.22 a 1 max dimensions (mm are the original dimensions) leadless ultra small plastic package; 2 terminals; body 1 x 0.6 x 0.4 mm a b y e 1 wb m l 1 (2 ) a 1 a b (2 ) (2 ) (2 ) d e (1) 0 0.5 1 mm scale 0.04 b d e e 1 0.65 l 1 w 0.1 y 0.03 2 1 wa m
BAP51LX_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 26 june 2007 6 of 8 nxp semiconductors BAP51LX silicon pin diode 9. abbreviations 10. revision history table 7. abbreviations acronym description pin p-type, intrinsic, n-type smd surface mounted device rf radio frequency table 8. revision history document id release date data sheet status change notice supersedes BAP51LX_1 20070626 product data sheet - -
BAP51LX_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 26 june 2007 7 of 8 nxp semiconductors BAP51LX silicon pin diode 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 11.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 11.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 12. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BAP51LX silicon pin diode ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 26 june 2007 document identifier: BAP51LX_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 13. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 2 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 6 11 legal information. . . . . . . . . . . . . . . . . . . . . . . . 7 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7 11.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 12 contact information. . . . . . . . . . . . . . . . . . . . . . 7 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8


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